document number: 81129 for technical questions, contact: optochipsupport@vishay.com www.vishay.com rev. 1.3, 29-mar-10 1 specification of gaalas ir emitting diode chip t8514vb vishay semiconductors description t8514vb is an infrared, 850 nm emitting diode in gaalas double hetero technology with high radiant power and high speed. anode is the bond pad on top. features ? package type: chip ? package form: single chip ? technology: double hetero ? dimensions chip (l x w x h in mm): 0.37 x 0.37 x 0.17 ? peak wavelength: = 850 nm ? compliant to rohs directive 2002/95/ec and in accordance to weee 2002/96/ec general information the datasheet is based on vi shay optoelectronics sample testing under certai n predetermined and assumed conditions, and is provided for illustration purpose only. cu stomers are encouraged to perform testin g in actual proposed packaged and used conditions. vishay optoelectronics die produc ts are tested using vishay optoelectron ics based quality assurance procedures and are manufactured using vishay optoelectronics established proces ses. estimates such as those described and set forth in this datasheet for semiconductor die will vary depending on a number of packaging, handling, use, and other factors. therefore sold die may not perform on an equivalent basis to standard package products. note test condition see table ?basic char acteristics? note moq: minimum order quantity note t amb = 25 c, unless otherwise specified - 21594 product summary component i e (mw/sr) ? (deg) p (nm) t r (ns) t8514vb 3.3 - 850 25 ordering information ordering code packaging remarks package form T8514VB-SF-F wafer sawn on foil moq: 25 000 pcs chip absolute maximum ratings parameter test condition symbol value unit forward current i f 100 ma reverse voltage v r 5v surge forward current t p = 100 s i fsm 1a junction temperature t j 125 c operating temperature range t amb - 40 to + 100 c storage temperature range chip t stg1 - 40 to + 100 c storage temperature range on foil t stg2 - 40 to + 50 c
www.vishay.com for technical questions, contact: optochipsupport@vishay.com document number: 81129 2 rev. 1.3, 29-mar-10 t8514vb vishay semiconductors specification of ga alas ir emitting diode chip notes (1) t amb = 25 c, unless otherwise specified (2) the measurements are based on samples of die which are mounted on a to-18 gold header without resin coating (3) the radiant intensity, i e , is measured on the geometric axis of the to-18 header (4) the radiant power, e , is measured with chip on bare plate and aperture angl e about 30, as indicated on the label of each wafer basic characteristics t amb = 25 c, unless otherwise specified fig. 1 - relative spectral emission e rel = f ( ) fig. 2 - radiant characteristics i rel = f( ? ) dimensions fig. 3 basic characteristics (1) parameter test condition symbol min. typ. max. unit forward voltage i f = 100 ma v f 1.44 v radiant power (2) i f = 100 ma e 23 mw radiant intensity (3) i f = 100 ma i e 3.3 mw/sr radiant power (epoxy encapsulated) i f = 100 ma e 52 mw radiant power chip (4) i f = 50 ma e 4.5 5.9 mw temperature coefficient of radiant power i f = 100 ma tk e - 0.35 %/k reverse voltage i r = 10 a v r 518 v temperature coefficient of forward voltage i f = 1 ma tk vf - 1.8 mv/k angle of half intensity i f = 100 ma ? > 80 deg peak wavelength i f = 30 ma p 850 nm spectral bandwidth i f = 30 ma 0.5 34 nm rise time/fall time i f = 100 ma t r , t f 25 50 ns 700 750 8 00 8 50 900 950 1000 1050 0 0.25 0.5 0.75 1.0 1.25 - w a v elength (nm) 21595 i f = 30 ma ? e rel - relati v e radiant po w er relati v e ang u lar intensity 100 50 0 50 100 90 8 0 70 60 50 40 30 20 10 0 - 8 0 - 70 - 60 - 50 - 40 - 30 - 20 - 10 0 21596 n (cathode) side electrode pattern: p (anode) side sectional v ie w (schematic): anode p-type gaalas n -type gaalas p-type gaalas typ. 140 m 21597
document number: 81129 for technical questions, contact: optochipsupport@vishay.com www.vishay.com rev. 1.3, 29-mar-10 3 t8514vb specification of gaalas ir emitting diode chip vishay semiconductors note (1) all chips are checked in ac cordance with the vishay semiconductor, specification of visual inspection fvov6870. the visual inspection shall be made in accordance with t he ?specification of vis ual inspection as refer enced?. the visual inspe ction of chip backside is performed with ster eo microscope with incident light and 40x to 80x magnification. the quality inspection (final visual ins pection) is performed by pro duction. an additional visual inspection step as special re lease procedure by qm is not installed. handling and storage conditions ? the hermetically sealed shipment lots shall be opened in temp erature and moisture controlled cleanroom environment only. it is mandatory to follow the rules for disposition of ma terial that can be hazardou s for humans and environment. ? product must be handled only at esd safe workstations. standa rd esd precautions and safe work environments are as defined in mil-hdbk-263. ? singulated die are not to be handled with tweezers. a vacuum wand with non metallic esd protected tip should be used. packing chips are fixed on adhesive foil. upon request the foils can be mounted on plastic frame or disco frame. for shipment, the wafe rs are arranged to stacks and hermetically sealed in plastic bags to ensure protection against en vironmental influence (humidity a nd contamination). use for recycling reliable operators only. we can help getting in touch with your nearest sales office. by agreement we will ta ke back packing material, if it is sorted. you will have to bear th e costs of transport. we will invoice you for any costs incurre d for packing material that is returned unsorted or which we are not obliged to accept. mechanical dimensions parameter symbol min. typ. max. unit length of chip edge (x-direction) l x 0.37 mm length of chip edge (y-direction) l y 0.37 mm emission area a e 0.325 x 0.325 mm 2 die height h 0.17 mm diameter of bondpad d 0.14 mm additional information (1) frontside metallization, anode aluminum backside metallizati on, cathode gold alloy dicing sawing die bonding technology epoxy bonding
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